Group III – Nitride Semiconductors: Preeminent Materials for Modern Electronic and Optoelectronic Applications

Optoelectronic applications of LTMBE III-V materials

A review of the application of semiconductor layers grown at low substrate temperatures to ultrafast optoelectronics is presented. The films, grown by molecular beam epitaxy primarily around 200 °C and subsequently annealed, are demonstrated to have high resistivity, high mobility, an ultrashort carrier lifetime, and a high dielectric breakdown. This combination of properties makes the low-temp...

Narrow-Gap Semiconductors and Low-Dimensional Structures for Optoelectronic Applications

Advances in the growth, analysis, and characterization of various narrow-gap semiconductors and low-dimensional opto-electronic device structures have brought revolution into the modern day's information and communication technology including optical communication and computing systems. The main objective of this special issue is to include the recent advances in the experimental and theoretica...

Borazine materials for organic optoelectronic applications.

Borazine materials have been demonstrated to be a new class of multifunctional and thermally stable materials with high electron (10(-3) cm2 V(-1) s(-1)) and moderate hole (10(-4) cm2 V(-1) s(-1)) mobilities for applications in electroluminescent devices.

Reduced Hamiltonian for Electronic States of Dilute Nitride Semiconductors

We present a novel model to describe conduction band of GaNxAs1−x (GaNAs). As well known, GaNAs shows exotic behavior such as large band gap bowing. Although there are various models to describe the conduction band of GaNAs, origin of the band gap bowing is still under debate. On the basis of perturbation theory, we show that the behavior of conduction band is mainly arising from intervalley mi...

OPTICAL PROPERTIES OF III-NITRIDE SEMICONDUCTORS AND THE APPLICATIONS IN ALL-OPTICAL SWITCHING By